batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. high current capability. high surge current capability. glass passivated chip junction. ? fast switching for high efficiency. lead-free parts meet rohs requirments. ? suffix "-h" indicates halogen-free parts, ex. ffm101g-h. ? ? ? ? ? ? ? ? ? ? ? ? epoxy:ul94-v0 rated flame retardant case : molded plastic, jedec do-214ac / sma terminals : solder plated, solderable per mil-std-750, method 2026 polarity : indicated by cathode band mounting position : any weight : 0.05 gram approximated maximum ratings (at t =25 a o c unless otherwise noted) parameter conditions forward rectified current forward surge current reverse current thermal resistance diode junction capacitance storage temperature ambient temperature = 75 c o 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r r ja c j t stg a a a o c/w o c pf 1.0 30 5.0 +175 -65 42 v = v t = 25 c r rrm j o v = v t = 100 c r rrm j o junction to ambient 15 100 ffm101g ffm102g ffm103g 50 100 200 35 70 140 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =1.0a f *5 maximum reverse recovery time, note 1 v f (v) *4 ffm104g ffm105g 400 600 280 420 1.30 -55 to +150 ffm106g FFM107G 800 1000 560 700 t rr (ns) *5 150 250 500 50 100 200 400 600 800 1000 (c) o operating temperature t, j 0.196(4.9) 0.180(4.5) 0.012(0.3) typ. 0.106(2.7) 0.091(2.3) 0.068(1.7) 0.060(1.5) 0.032 (0.8) typ. 0.032(0.8) typ. note 1. reverse recovery time test condition, i =0.5a, i =1.0a, i =0.25a frrr ffm101g thru FFM107G chip silicon rectifier 1.0a surface mount fast recovery rectifiers-50-1000v features mechanical data page 1/2 @ 2010 copyright by american first semiconductor sma package outline dimensions in inches and (millimeters)
0.1 1.0 .01 10 50 rating and characteristic curves fig.1-typical forward characteristics fig.2-typical forward current derating curve average for ward current ,(a) fig.5-typical junction capacitance reverse voltage,(v) junction cap acitance,(pf) instantaneous for ward current ,(a) forward voltage,(v) pulse width 300us 1% duty cycle 0.2 0.4 0.6 0.8 1.0 1.2 35 30 25 20 15 10 5 0 (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr .01 .05 .1 .5 1 5 10 50 100 d.u.t. .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 ambient temperature ( c) fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive t =25 c j fig.4-maximum non-repetitive forward surge current peak for waard surge current ,(a) 10 0 20 30 40 50 number of cycles at 60hz 110 5 50 100 t =25 c j 8.3ms single half sine wave jedec method single phase half wave 60hz resistive or inductive load 0 20 40 60 80 100 120 140 160 180 200 0 page 2/2 www.first-semi.com ffm101g thru FFM107G
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